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| APTGT25X120T3G 3 Phase bridge Trench + Field Stop IGBT(R) Power Module 15 16 19 20 18 23 25 29 30 22 28 R1 31 14 VCES = 1200V IC = 25A @ Tc = 80C Application * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance * High level of integration * Internal thermistor for temperature monitoring Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * RoHS compliant 11 10 12 8 7 4 3 2 13 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 40 25 50 20 156 50A @ 1150V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT25X120T3G - Rev 0 July, 2007 APTGT25X120T3G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 25A Tj = 125C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Min Typ 1.7 2.0 5.8 Max 250 2.1 6.5 400 Unit A V V nA 5.0 Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 25A RG = 27 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 25A RG = 27 VGE = 15V Tj = 25C VBus = 600V Tj = 125C IC = 25A Tj = 25C RG = 27 Tj = 125C Min Typ 1800 82 90 30 420 70 90 50 520 90 1.9 2.5 1.9 2.9 Max Unit pF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 150C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 800V Min 1200 Typ Max 100 500 Unit V A A Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=1200V Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 30 2.6 3.2 1.8 300 380 360 1700 3.1 V ns nC July, 2007 2-5 APTGT25X120T3G - Rev 0 di/dt =200A/s www.microsemi.com APTGT25X120T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.15 K RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 Min Typ 50 3952 Max Unit k K Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.8 1.2 150 125 100 4.7 110 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT25X120T3G - Rev 0 July, 2007 17 28 APTGT25X120T3G Typical Performance Curve 50 40 TJ=125C Output Characteristics (VGE=15V) TJ=25C Output Characteristics 50 TJ = 125C VGE=17V VGE=13V 40 IC (A) 30 20 10 0 IC (A) 30 20 10 0 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 VGE=15V VGE=9V 0 1 2 VCE (V) 3 4 50 40 30 20 10 0 5 6 Transfert Characteristics 6 5 TJ=25C Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 27 TJ = 125C Eon 4 E (mJ) TJ=125C Eoff Eon IC (A) 3 2 TJ=25C 1 0 7 8 9 10 11 12 0 10 20 IC (A) 30 40 50 VGE (V) Switching Energy Losses vs Gate Resistance 8 7 6 E (mJ) 5 4 3 2 1 0 0 40 80 120 160 Gate Resistance (ohms) 200 Eon VCE = 600V VGE =15V IC = 25A TJ = 125C Reverse Bias Safe Operating Area 60 Eon 50 40 IC (A) Eoff 30 20 10 0 0 300 600 900 VCE (V) 1200 1500 VGE=15V TJ=125C RG=27 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 Thermal Impedance (C/W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.9 IGBT 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGT25X120T3G - Rev 0 0 0.00001 July, 2007 0.3 APTGT25X120T3G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 40 VCE=600V D=50% RG=27 TJ=125C TC=75C hard switching Forward Characteristic of diode 80 70 30 60 50 IF (A) 40 30 20 10 TJ=125C 20 TJ=25C 10 0 0 10 20 IC (A) 30 40 50 0 0 1 2 VF (V) 3 4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0.7 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT25X120T3G - Rev 0 July, 2007 |
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